MMBT2907 2907 2F 40V 800mA PNP bipolar junction transistor BJT Transistors SOT-23

Product details of MMBT2907 2907 2F 40V 800mA PNP bipolar junction transistor BJT Transistors SOT-23
The MMBT2907 is a surface-mount PNP silicon bipolar junction transistor (BJT) packaged in a compact SOT-23 (TO-236) housing, commonly used for general-purpose amplification and small-signal or high-speed switching applications.

Specification of MMBT2907 2907 2F 40V 800mA PNP bipolar junction transistor BJT Transistors SOT-23
Type: PNP Bipolar Junction Transistor (BJT)
Package: SOT-23-3 (SMD Code marking often 2B or 2F)
Collector-Emitter Voltage: 40 V (standard MMBT2907) up to 60 V (MMBT2907A / MMBT2907ALT1G)
Collector-Base Voltage: -60 V
Emitter-Base Voltage: -5.0 V
Continuous Collector Current: 600 mA – 800 mA (max peak up to 1.2 A)
Power Dissipation: 350 mW to 400 mW
DC Current Gain : Typically ranges from 100 to 300 
Transition Frequency: 200 MHz (min)
Complementary NPN Pair: MMBT2222 / MMBT2222A