IRFP460 IRFP460PBF 500V 20A N-channel MOSFET TO-247 HQ

Product details of IRFP460 IRFP460PBF 500V 20A N-channel MOSFET TO-247 HQ
IRFP460 N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from .

Specification of IRFP460 IRFP460PBF 500V 20A N-channel MOSFET TO-247 HQ
N-channel power MOSFET
Drain-source breakdown voltage: 500V
Continuous drain current: 20A
Input capacitance: 4.2nF
Gate threshold: 2V to 4V
Available in TO-247 package