IRF2804 40V 75A N-Channel Power MOSFET TO-220

Product details of IRF2804 40V 75A N-Channel Power MOSFET TO-220
Specifically designed for Automotive applications, this HEXFET®  Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of  this  design    are  a  175°C  junction  operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Specification of IRF2804 40V 75A N-Channel Power MOSFET TO-220
Type Designator: IRF2804
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 280 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 1690 pF