A101 2SA101 40V 10mA PNP Bipolar Junction Transistor TO-1

Product details of A101 2SA101 40V 10mA PNP Bipolar Junction Transistor TO-1
A101 2SA101 40V 10mA PNP Bipolar Junction Transistor TO-1 is a silicon PNP transistor preferred for use in applications like: RF, Low Power, General Purpose

Specification A101 2SA101 40V 10mA PNP Bipolar Junction Transistor TO-1
Type Designator: A101
Material of Transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc): 20mW
Maximum collector-base voltage (Ucb): 15V
Maximum collector-emitter voltage (Uce):
Maximum emitter-base voltage (Ueb): -
Maximum collector current (Ic max): 4mA
Maximum junction temperature (Tj): 65°C
Transition frequency (ft): 25MHz
Collector capacitance (Cc), Pf: 2
Forward current transfer ratio (hFE), min/max: 50T
Package: TO-1