RE200B SN200B00 PIR INFARED NICERA Pyroelectric Infrared Sensor

RE200B SN200B00 PIR INFARED NICERA Pyroelectric Infrared Sensor

Size: 8.3 * 4.2mm
Sensitive element area: 2.0 × 1.0mm2
Substrate material: Silicon
Substrate thickness: 0.5mm
Wavelength 7-14?m
Average Transmittance:> 75%
Output:> 2.5V (420 ° k blackbody modulation frequency 0.3-3.0Hz 1Hz bandwidth of 72.5db gain)
Noise: <200mV (mVp-p) (25 ?)
Balance: <20%
Operating voltage: 2.2-15V
Current: 8.5-24uA (VD = 10V, Rs = 47kw, 25C)
Source voltage: 0.4-1 .1 V (VD = 10V, Rs = 47k?, 25C)
Operating temperature: -20C - +70C
Storage temperature: -35C - +80C
Field: 139 ° × 126 °
Package: DIP