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Brand: Unbranded
SKU: 2195
Datasheet: IRF510.pdf
Availability: In Stock
Rs.60.0

Product details of IRF510 5A 100V N-Channel Power MOSFET TO-220
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits

Specification of IRF510 5A 100V N-Channel Power MOSFET TO-220
Transistor Polarity: N-channel
Drain-to-source voltage VDS: 100V
Drain-to-source current ID: 5.6A
On-state resistance (drain-to-source resistance) RDS: 0.54Ω
Operating temperature range: -55˚C to 175˚C
Gate charge Qg: 8.3nC
Gate-source voltage VGS: ±20V
Maximum power dissipation: 43W
Maximum voltage required to conduct: 2V to 4V
Package type: TO-220



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