IRF2807 2807 75V 82A N-Channel Power MOSFET TO-220

Product details IRF2807 2807 75V 82A N-Channel Power MOSFET TO-220
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specification of IRF2807 2807 75V 82A N-Channel Power MOSFET TO-220
Package Type: TO-220
Type Designator: IRF2807
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Maximum Power Dissipation (Pd): 230W
Maximum Drain-Source Voltage |Vds|: 75V
Maximum Gate-Source Voltage |Vgs|: 20V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4V
Maximum Drain Current |Id|: 82A
Maximum Junction Temperature (Tj): 175°C
Total Gate Charge (Qg): 160(max) nC
Rise Time (tr): 64nS
Drain-Source Capacitance (Cd): 610pF
Maximum Drain-Source On-State Resistance (Rds): 0.013Ohm