DALLAS DS121230Y-100 DS121230Y 256K Nonvolatile SRAM DIP-28

Product details of DALLAS DS121230Y-100 DS121230Y 256K Nonvolatile SRAM DIP-28
The DS1230Y-100+ is a 256k Non-volatile SRAM is 262,144-bit, fully static, non-volatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Specification of DALLAS DS121230Y-100 DS121230Y 256K Nonvolatile SRAM DIP-28
10-year Minimum data retention in absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM, EEPROM or flash memory
Unlimited write cycles
Low-power CMOS
Full ±10% VCC operating range