K2611 900V 9A N-Channel Power MOSFET TO-247

Product details of K2611 9A 900V N-Channel MOSFET TO-247
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Specification of K2611 9A 900V N-Channel MOSFET TO-247
Type Designator: K2611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 72 nC
Rise Time (tr): 135 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
Package: TO-247