Brand: Unbranded
SKU: 562
Datasheet: 2N7000.pdf
Availability: In Stock

Product details of 2N7000 60V 200mA N-Channel Signal MOSFET TO-92
This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Specification of 2N7000 60V 200mA N-Channel Signal MOSFET TO-92
Type Designator: 2N7000
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Maximum Power Dissipation (Pd): 1W
Maximum Drain-Source Voltage |Vds|: 60V
Maximum Gate-Source Voltage |Vgs|: 18V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3V
Maximum Drain Current |Id|: 0.35A
Maximum Junction Temperature (Tj): 150°C
Total Gate Charge (Qg): 1.4nC
Rise Time (tr): 15nS
Drain-Source Capacitance (Cd): 20pF
Maximum Drain-Source On-State Resistance (Rds): 5Ohm

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