IRFP260N 200V 50A N-Channel Power MOSFET TO-247AC

Product details of IRFP260N 200V 50A N-Channel Power MOSFET TO-247AC
IRFP260 200V 50A N-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Specification of IRFP260N 200V 50A N-Channel Power MOSFET TO-247AC
Type Designator: IRFP260
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 46 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 230(max) nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 1200 pF