IRFP150 100V 42A N-Channel MOSFET TO-3P TO-247

Product details of IRFP150 100V 42A N-Channel MOSFET TO-3P TO-247
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of nergy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Specification of IRFP150 100V 42A N-Channel MOSFET TO-3P TO-247
Type Designator: IRFP150
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 100V
Maximum Gate-Source Voltage |Vgs|: 20V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4V
Maximum Drain Current |Id|: 41A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 140(max) nC
Rise Time (tr): 120nS
Drain-Source Capacitance (Cd): 1100pF
Maximum Drain-Source On-State Resistance (Rds): 0.055Ohm