IRF9640 200V 11A P-Channel MOSFET TO-220

Product details of IRF9640 200V 11A P-Channel MOSFET TO-220
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Specification of IRF9640 200V 11A P-Channel MOSFET TO-220
11A, 200V
rDS(ON) = 0.500Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance